Tuesday, October 11, 2016

Samsung to churn out new 3-D flash memory for smartphones

SEOUL -- Samsung Electronics is gearing up to begin mass-producing the newest generation of 3-D NAND flash memory for smartphones.
Within the year, the South Korean electronics giant plans to manufacture 3-D NAND with 64 layers of data-storing memory cells both domestically at its new chip factory under construction in Pyeongtaek and in China at a factory in Xian.
Samsung has leading shares of the global markets for both NAND flash memory and DRAM memory for smartphones.
The NAND flash memory market was in a slump in 2015 and initially looked like it would continue to stagnate through 2016.
But the market has begun to recover and Samsung wants to move on as quickly as possible from 48-layer NAND to 64-layer NAND to keep a step ahead of second-ranked Toshiba, which plans to begin mass production of the chips in the first half of 2017.
Meanwhile, Samsung announced earnings guidance for the July-September quarter on Friday. The company will not release a breakdown with details until the end of the month, but it seems that its chip business was a major contributor to a year-on-year 5% rise in consolidated operating profit to an estimated 7.8 trillion won ($7 billion) in the quarter.
Consolidated sales in the same period dropped 5% to an estimated 49 trillion won, hurt by the recall of the Galaxy Note 7 smartphone.

http://asia.nikkei.com/Business/Companies/Samsung-to-churn-out-new-3-D-flash-memory-for-smartphones

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