Toshiba Corp. and storage maker Western Digital Corp. (WDC) have
opened a new semiconductor fab dedicated to the manufacturing of
next-generation NAND flash memory.
The fab, located in Yokkaichi, Mie Prefecture, Japan, will support
the conversion of the companies’ 2-D NAND capacity to 3-D flash memory
used in smartphones, solid state drives and other applications. The
companies say the fab will allow for higher densities from the flash
memory as well as better device performance.
A
photo of the cleanroom inside the Toshiba and Western Digital
semiconductor fabrication facility located in Yokkaichi, Mie Prefecture,
Japan. Source: Toshiba The fab began construction in
September of 2014 when Toshiba and SanDisk formed an agreement for the
mass production of 3-D flash memory. In May, Western Digital completed
its acquisition of SanDisk with this fab, and having access to a
high-volume supply of flash memory was one of the key aspects of the
deal. The first phase of production at the facility began in March.
Toshiba and WDC plan to invest to expand the fab capacity over time
and dependent upon market conditions. The Yokkaichi fab includes a
site-wide integrated production system—which uses big data to analyze
more than 1.6 billion data points each day—and will be used to improve
the efficiency and quality of the 3-D NAND flash memory.
http://electronics360.globalspec.com/article/7007/toshiba-and-western-digital-open-new-flash-memory-fab-in-japan
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