Samsung Electronics announced Thursday that it has begun mass production
of 64-layer, 256-Gigabit V-NAND flash memory chips and will apply the
cutting-edge technology to the company’s lineup of storage solutions for
servers, PCs and mobile applications.
Samsung had been
producing the latest V-NAND chips for a limited number of customers
since January, but the company had not made it public in order to first
gauge real demand accurately and secure its production capacity.
To
gain a competitive edge in the memory market, Samsung intends to expand
production of the fourth-generation V-NAND chips to above 50 percent of
its monthly NAND production by the end of the year, the company said.
The South Korean tech titan is set to start operating a newly built
semiconductor plant in Pyeongtaek, Gyeonggi Province, in late June, and
the plant is highly expected to be a production hub for the 64-layer
V-NAND chips, according to industry sources.
The Samsung
64-layer 3-bit 256-GB V-NAND features a data transfer speed of 1
gigabits per second, which is the fastest among currently available NAND
flash memory. The new 64-layer V-NAND provides more than a 30 percent
productivity gain compared to the 48-layer 256 GB V-NAND that preceded
it.
“We will keep developing next-generation V-NAND products in
sync with the global IT industry so that we can contribute to the
timeliest launches of new systems and services in bringing a higher
level of satisfaction to consumers,” said Kye Hyun-kyung, executive vice
president of the flash product and technology team at Samsung
Electronics.
http://www.koreaherald.com/view.php?ud=20170615000735
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